To fully exploit the potential of WBG Power Semiconductors in automotive applications e.g. for EVs and HEVs a new, highly integrated power module packaging technology is required. Main target is the miniaturization of the power electronic converters which means a significant in-crease in power density and therewith of temperature. This can lead to highly integrated 3D power modules e.g. with double-sided cooling.
The complex structure with gaps and shadowing of the modules on the one side, and the higher temperatures with the related wider temperature swings on the other side, lead to major challenges for the electrical isolation and climate protection. Therefore, advanced passivation, coatings and encapsulation systems have to be developed which will fulfill these requirements. These encapsulation or coating systems have to be optimized for high temperatures (≤ 300°C) and high dielectric strength.
Furthermore, todays reliability tests have to be modified for the higher temperatures and the wider temperature ranges in active and passive temperature cycling as well as in electrochemical humidity and corrosion testing. This will be another focus of the proposed project.
Scope of the project
- Parylene coating for narrow gaps and 3D structures
- Comparison of various test structures and treatments
(cleaning, coating, gap variations, etc.)
- Reliability testing
- Application in 3D-Integrated WBG power modules
Today there is a general trend towards utilization of DC networks not only related to the automotive on-board network and photovoltaic systems but also addressing home and office power networks as well as power grids in industrial production sites. However, there is a general challenge related to DC networks which is the spark-free and arcing-free switching/interruption of DC power. State of the art solutions are special mechanical switches suppressing the arcing (possible in low voltage applications) or hybrid solutions for higher voltages. Both solutions are bulky, heavy and expensive
Scope of the project
The project ´Electronic Circuit Breaker for DC Networks´ aims at a full electronic solution taking benefit out of the low Ron resistance of SiC power devices. The project aims at different applications in the voltage range of several hundred volts DC. Two technology pathways are pursued:
- Development of monolithically -integrated SiC-DC-breaker based on SiC JFET
- Optimization of SiC-MOSFET for low on-resistanc