Report of the 11th ECPE SiC & GaN User Forum

The biannual ECPE Wide Bandgap User Forum is dedicated to report state of the art and prospects of silicon carbide (SiC) and gallium nitride (GaN) devices in power electronic systemsm and to foster an exchange between system, circuit and device designers.

In the May issue of Bodo's Power Systems, Andreas Lindeman (Technical Chairman of the ECPE SiC & GaN User Forum) contributed a guest editorial on the main topics of the SiC & GaN User Forum.

Read the article here