Autoren: Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker
Physics, Characteristics, Reliability
• Describes structure, characteristics and technical features of specific power devices
• lncludes sections on packaging and reliability
• Uniquely deals with the effects of emitters
The first edition of this book was widely used and accepted by professionals in the field. The progress in power devices, however, makes a second edition necessary.
For this second edition, the basic chapters on semiconductor properties and pn-junctions were revised and extended widely. Effects of doping, current transport, and recombination are now treated much more in detail and depth. In the chapter on technology, the description of theory of diffusion in silicon is considerably augmented. Aspects on 300-mm technology for Si IGBTs were added. New are the sections on radiation-induced doping and on GaN technology. The chapter on Schottky diodes was revised by an improved treatment of the physics of the metal-semiconductor junction and extended by sections on Merged Pin Schottky diodes. In the chapter on thyristors, the description of the gate-commutated thyristor GCT is added. The chapter on
MOS transistors and field-controlled wide-bandgap devices replaces the former chapter on MOSFETs. Despite the progress in wide-bandgap devices, IGBTs are still seen as the main volume components for future power electronics, new aspects on reverse conducting IGBTs were added, and future potential of the IGBT is discussed.
Due to the strong progress in packaging, the former chapter on packaging technology is now replaced by two chapters: "Packaging of Power Devices" and "Reliability and Reliability Testing." Especially the reliability sections are
strongly expanded considering new test methods, also in the viewpoint of wide-bandgap devices. A comprehensive section on cosmic ray failures is now placed in this section.
Finally, new research results on transient avalanche oscillations were added as weil as some aspects on monolithically integrated GaN devices.